Optical properties of InAs epilayers grown on GaAs by molecular beam epitaxy

• Published in: Journal of crystal growth 2002, Vol.234 (1), p.110-114
• Main Authors: Kim, Gu Hyun, Choi, Jung Bum, Leem, Jae-Young, Lee, Joo In, Noh, Sam Kyu, Kim, Jong Su, Kim, Jin Soo, Kang, Se-Kyung, Ban, Seung Il
• Format: Article
• Language: English
• Subjects: A1. Optical microscopy; A1. Strain; A3. Molecular beam epitaxy; B2. Semiconducting III–V materials; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Iii-v semiconductors; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Physics
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(01)01666-9

InAs epilayers with thicknesses of 400, 500, 750, and 1500 nm were grown on GaAs by molecular beam epitaxy and their properties were investigated by reflection high-energy electron diffraction and photoluminescence (PL). For all InAs epilayers, the PL peak position measured at 10 K is blue-shifted from that of bulk InAs, which could be largely due to the residual strain in the epilayer. InAs epilayers have PL peaks red-shifted to lower energy as the thickness of InAs layer is increased. This is the first observation on PL of sub-μm thick InAs epilayers grown on GaAs substrate. While the PL peak position of 400 nm thick InAs layer is linearly blue-shifted toward higher energy with increase in excitation intensity ranging from 10 to 140 mW, those of thicker InAs epilayers are gradually blue-shifted and then, saturated above a power of 75 mW.