Growth of large high-quality SiC single crystals

The availability of large high-quality silicon carbide (SiC) single crystals is a key issue in the development of the full potential of SiC-based device technology. In this paper, recent achievements in bulk crystal growth of SiC are reviewed. We present results on the physical vapor transport growt...

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Bibliographic Details
Published in:Journal of crystal growth 2002-04, Vol.237, p.1180-1186
Main Authors: Ohtani, Noboru, Fujimoto, Tatsuo, Katsuno, Masakazu, Aigo, Takashi, Yashiro, Hirokatsu
Format: Article
Language:English
Subjects:
A1. Defects
A2. Growth from vapor
A2. Single crystal growth
B1. Inorganic compounds
B2. Semiconducting silicon compounds
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Summary:The availability of large high-quality silicon carbide (SiC) single crystals is a key issue in the development of the full potential of SiC-based device technology. In this paper, recent achievements in bulk crystal growth of SiC are reviewed. We present results on the physical vapor transport growth of SiC bulk single crystals by highlighting the crystal diameter enlargement and the quality improvement of SiC crystals. The causes and formation mechanisms of crystallographic defects, such as micropipes and low-angle grain boundaries, in SiC crystals are discussed. The results of the growth perpendicular to the c-axis are also reported, where stacking faults are defects of major concern. We present an atomistic surface model for the stacking fault generation and discuss a possible way to circumvent this problem.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(01)02153-4