Effects of thermal convection of NH3 during growth of GaN epitaxial layers by horizontal MOCVD reactor

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Bibliographic Details
Published in:Journal of crystal growth 2002-03, Vol.236 (1-3), p.113-118
Main Authors: CHOI, Dae-Kyu, LEE, Chang-Yup, LEE, Cheul-Ro
Format: Article
Language:English
Subjects:
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
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ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(01)02204-7