A new way to achieve dislocation-free heteroepitaxial growth by molecular beam epitaxy: vertical microchannel epitaxy

In this paper we describe a completely new technique that is named as vertical microchannel epitaxy (V-MCE). By using V-MCE, reduction in both dislocation density and residual stress generated in highly mismatched heteroepitaxy, such as GaAs on Si, can be accomplished in molecular beam epitaxy. A na...

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Bibliographic Details
Published in:Journal of crystal growth 2002-04, Vol.237, p.1460-1465
Main Authors: Matsunaga, Y., Naritsuka, S., Nishinaga, T.
Format: Article
Language:English
Subjects:
A1. Dislocations
A1. Residual stress
A3. Heteroepitaxy
A3. Microchannel epitaxy
A3. Molecular beam epitaxy
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Summary:In this paper we describe a completely new technique that is named as vertical microchannel epitaxy (V-MCE). By using V-MCE, reduction in both dislocation density and residual stress generated in highly mismatched heteroepitaxy, such as GaAs on Si, can be accomplished in molecular beam epitaxy. A narrow window opened in an SiO 2 is used to grow GaAs selectively to get a vertical structure by V-MCE. Using the optimized growth condition, we have successfully grown V-MCE GaAs layers on Si (0 0 1) substrates with a high aspect ratio of about 2.0. A high aspect ratio is beneficial for the reduction of both dislocations and residual stress. From the observation of etch pit density it is found that a large number of dislocations went out from the side surfaces of the layer. Photoluminescence study indicates that V-MCE is also useful to release the residual stress in the heteroepitaxial layer.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(01)02290-4