Growth of Ge quantum dots on vicinal Si(0 0 1) substrate by solid phase epitaxy

• Published in: Journal of crystal growth 2002-03, Vol.236 (4), p.557-562
• Main Authors: Hu, D.Z., Zhao, D.T., Jiang, W.R., Shi, B., Fan, Y.L., Jiang, Z.M.
• Format: Article
• Language: English
• Subjects: A1. Quantum dots; A3. Solid phase epitaxy; B2. Germanium silicon alloys; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Solid phase epitaxy; growth from solid phases; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(02)00851-5

Ge quantum dots are grown on vicinal Si(0 0 1) substrates with an off-angle of 6° towards [1 1 0] by solid phase epitaxy. The optimum temperature for the growth of Ge quantum dots is found to be 640°C. The activation energy of Ge quantum dot growth on vicinal Si(0 0 1) substrate is estimated to be 2.0 eV, which is much larger than that of 0.3 eV on Si(1 1 1) substrate. It is also found that the critical thickness for Ge islanding growth on vicinal Si(0 0 1) substrates is smaller than that on flat Si(0 0 1) substrates.