Incorporation effects in MOCVD-grown (In)GaAsN using different nitrogen precursors

• Published in: Journal of crystal growth 2002-08, Vol.243 (2), p.231-237
• Main Authors: Ptak, A.J, Kurtz, Sarah, Curtis, C, Reedy, R, Olson, J.M
• Format: Article
• Language: English
• Subjects: A3. Metalorganic chemical vapor deposition; B1. Arsenates; B1. Nitrides; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Composition and phase identification; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(02)01412-4

The incorporation of In into InGaAsN grown by MOCVD is known to reduce the incorporation of nitrogen. In addition, the most commonly used nitrogen precursors are all extremely inefficient. Growth of InGaAsN with NF 3 as the nitrogen precursor is relatively insensitive to the addition of indium and has an incorporation efficiency much higher than dimethylhydrazine. The results from a study of four nitrogen precursors are presented, indicating that only NF 3 is insensitive to the incorporation of In. The relative incorporation efficiencies for the four sources are also determined, indicating that the relative efficiencies are as follows: NF 3∼hydrazine>tertiary-butylhydrazine>dimethylhydrazine. We propose a simple model based on chemical reactions to account for the differences in incorporation efficiency.