Net acceptor concentration in ZnSe:Sb grown from vapor phase

• Published in: Journal of crystal growth 2002-07, Vol.242 (1), p.155-160
• Main Authors: Prokesch, M., Irmscher, K., Rinas, U., Makino, H., Yao, T.
• Format: Article
• Language: English
• Subjects: A1. Doping; A1. Impurities; A1. Point defects; A2. Growth from vapor; B1. Zinc compounds; B2. Semiconducting II–VI materials; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Conductivity phenomena in semiconductors and insulators; Electronic transport in condensed matter; Exact sciences and technology; Ii-vi semiconductors; Low-field transport and mobility; piezoresistance; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Photoluminescence; Physics
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(02)01424-0

ZnSe:Sb bulk crystals were grown by a physical vapor transport technique and subsequently annealed under Se 2 partial pressure. Conduction type and net doping concentrations have been determined by capacitance–voltage measurements. All the as-grown crystals are semi-insulating. After annealing, they become p-type conducting with maximum net acceptor concentrations of (7±3)×10 16 cm −3. The low-temperature photoluminescence of the as-grown (semi-insulating) crystals is dominated by a deep neutral acceptor bound exciton emission line and its phonon replica. After annealing, the p-type conducting samples show an intense donor–acceptor pair recombination and a shallow neutral acceptor bound exciton line appears with a binding energy of about 9.5 meV.