Growth parameters for polycrystalline GaN on silica substrates by metalorganic chemical vapor deposition

Polycrystalline GaN was grown on silica glass substrates by metalorganic chemical vapor deposition using a two-step growth process. It was found that the optical and structural properties were significantly dependent on the growth conditions of GaN buffer layers. Growth parameters for the low-temper...

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Bibliographic Details
Published in:Journal of crystal growth 2002-07, Vol.242 (3), p.383-388
Main Authors: Park, Seong-Eun, Kim, Dae-Jin, Woo, Shi-gwan, Lim, Sung-Mook, O, Byungsung
Format: Article
Language:English
Subjects:
A3. Metalorganic chemical vapor deposition
A3. Polycrystalline deposition
B1. Nitrides
B2. Semiconducting III–V materials
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
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Summary:Polycrystalline GaN was grown on silica glass substrates by metalorganic chemical vapor deposition using a two-step growth process. It was found that the optical and structural properties were significantly dependent on the growth conditions of GaN buffer layers. Growth parameters for the low-temperature buffer layers, such as the growth temperature, the growth time, the trimethyl gallium flow rate and the ramping time, have played important roles in improving the quality of polycrystalline GaN. This tendency is quite similar to the case of a GaN epilayer on a sapphire substrate.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(02)01432-X