Reciprocal space mapping of GaNxAs1-x grown by RF plasma-assisted solid source molecular beam epitaxy

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Bibliographic Details
Published in:Journal of crystal growth 2002-09, Vol.243 (3-4), p.427-431
Main Authors: LOKE, W. K, YOON, S. F, NG, T. K, WANG, S. Z, FAN, W. J
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Iii-v semiconductors
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
Physics of gases, plasmas and electric discharges
Physics of plasmas and electric discharges
Plasma applications
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ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(02)01570-1