Effects of isotherm shapes on the point-defect behavior in growing silicon crystals

An analytical calculation on the behavior of point-defects in growing silicon crystals was performed with some types of temperature field, the isotherms of which are inclined, spherical and toroidal. The calculation concluded that the saturation of the point defects is affected not only by the tempe...

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Bibliographic Details
Published in:Journal of crystal growth 2002-10, Vol.244 (2), p.142-156
Main Author: Ebe, Tadayuki
Format: Article
Language:English
Subjects:
A1. Point defects
A2. Czochralski method
B1. Elemental solids
B2. Semiconducting silicon
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Defects and impurities in crystals
microstructure
Exact sciences and technology
Growth from melts
zone melting and refining
Materials science
Methods of crystal growth
physics of crystal growth
Physics
Point defects (vacancies, interstitials, color centers, etc.) and defect clusters
Structure of solids and liquids
crystallography
Theories and models of crystal defects
Theory and models of crystal growth
physics of crystal growth, crystal morphology and orientation
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Summary:An analytical calculation on the behavior of point-defects in growing silicon crystals was performed with some types of temperature field, the isotherms of which are inclined, spherical and toroidal. The calculation concluded that the saturation of the point defects is affected not only by the temperature gradient, the derivative of it and the pull rate but also by the inclination and the curvature of the isotherms. Quantitative formulation will be given later.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(02)01617-2