In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate

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Bibliographic Details
Published in:Journal of crystal growth 2003, Vol.247 (1-2), p.126-130
Main Authors: ZHANG, Z. C, YANG, S. Y, ZHANG, F. Q, XU, B, ZENG, Y. P, CHEN, Y. H, WANG, Z. G
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Iii-v semiconductors
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
Structure and morphology
thickness
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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ISSN:0022-0248
1873-5002
DOI:10.1016/s0022-0248(02)01950-4