STM images of anisotropic atomic steps on si(111)-7 × 7 surfaces

Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan STM measurements on Si(lll)-7X 7 surfaces have revealed that only (112) steps are straight and their edges coincide with the 7 X 7 unit-mesh edges for unfaulted halves in the upper terraces adjacent to them. In the lower terrace...

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Bibliographic Details
Published in:Journal of crystal growth 1990, Vol.99 (1), p.1329-1332
Main Authors: Tokumoto, Hiroshi, Miki, Kazushi, Kajimura, Koji
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface structure and topography
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Summary:Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan STM measurements on Si(lll)-7X 7 surfaces have revealed that only (112) steps are straight and their edges coincide with the 7 X 7 unit-mesh edges for unfaulted halves in the upper terraces adjacent to them. In the lower terraces, the edges are parallel to the 7 X 7 unit-mesh edges but do not coincide with them. This behavior is contrary to the previous observations, and is not explained by a simple bond model for the step edge formation. The STM images for large areas up to 2100 X 2100 Å 2 have shown that both the straight (112) steps, and non-straight steps, coexist in a zigzag manner and are parallel macroscopically to each other.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(08)80129-7