Dependence of impurity incorporation upon substrate misorientation during GaAs growth by metalorganic vapour phase epitaxy

• Published in: Journal of crystal growth 1997-01, Vol.170 (1-4), p.270-275
• Main Authors: Hageman, P.R., te Nijenhuis, J., Anders, M.J., Giling, L.J.
• Format: Article
• Language: English
• Subjects: Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Defects and impurities: doping, implantation, distribution, concentration, etc; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Vapor phase epitaxy; growth from vapor phase
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(96)00509-X

Doping studies of the incorporation behaviour of three different dopants (Zn, In and Si) versus the misorientation of the (100) surface during MOVPE growth of GaAs have been carried out with diethylzinc, trimethylindium and disilane as precursors. The incorporation of the dopants has been studied as function of the input mole fraction dopant, growth temperature, degree and direction of misorientation. In order to explain the results we discuss the BCF theory and the nature of the steps as function of above mentioned parameters. It appears that the BCF theory alone cannot explain the results, a counteracting mechanism has been introduced based on preferential arsenic desorption from the step edges.