MOVPE-grown high CW power InGaAs/InGaAsP/InGaP diode lasers

Al-free InGaAs/InGaAsP/InGaP laser structures grown by MOVPE have yielded new records in performance. CW front-facet-emitted powers of 5.8 W are achieved from optimized double-quantum-well lasers with 100 μm wide stripes and 1 mm long cavity lengths. Devices with a 0.5 mm cavity length exhibit total...

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Bibliographic Details
Published in:Journal of crystal growth 1997-01, Vol.170 (1-4), p.383-389
Main Authors: Mawst, L.J., Bhattacharya, A., Nesnidal, M., Lopez, J., Botez, D., Syrbu, A.V., Yakovlev, V.P., Suruceanu, G.I., Mereutza, A.Z., Jansen, M., Nabiev, R.F.
Format: Article
Language:English
Subjects:
Efficiency, stability, gain, and other operational parameters
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Laser materials
Laser optical systems: design and operation
Lasers
Optical materials
Optics
Physics
Semiconductor lasers
laser diodes
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Summary:Al-free InGaAs/InGaAsP/InGaP laser structures grown by MOVPE have yielded new records in performance. CW front-facet-emitted powers of 5.8 W are achieved from optimized double-quantum-well lasers with 100 μm wide stripes and 1 mm long cavity lengths. Devices with a 0.5 mm cavity length exhibit total power conversion efficiencies as high as 59%. A novel facet passivation technique, consisting of laser-assisted deposition of ZnSe, is shown to increase the COD level by 50%. Single-mode, CW output powers of 400 mW are obtained from triple-core ARROW lasers fabricated by a two-step MOVPE growth process.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(96)00513-1