Characterization of p-type ZnSe grown by MOVPE; excitonic emission lifetime measurements

Time-resolved photoluminescence (TRPL) measurements are made on p-type nitrogen-doped ZnSe grown by photoassisted metalorganic vapor phase epitaxy (MOVPE) together with post-growth thermal annealing, in order to investigate optical quality of the layers. It is suggested that the annealing degrades t...

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Bibliographic Details
Published in:Journal of crystal growth 1997-01, Vol.170 (1-4), p.507-509
Main Authors: Ogata, Ken-ichi, Kera, Takashi, Kawaguchi, Daisuke, Fujita, Shizuo, Fujita, Shigeo
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron states
Exact sciences and technology
Excitons and related phenomena
Ii-vi semiconductors
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
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Summary:Time-resolved photoluminescence (TRPL) measurements are made on p-type nitrogen-doped ZnSe grown by photoassisted metalorganic vapor phase epitaxy (MOVPE) together with post-growth thermal annealing, in order to investigate optical quality of the layers. It is suggested that the annealing degrades the layer quality and the MOVPE samples have more non-radiative recombination centers compared with MBE samples. A key issue for high quality p-ZnSe by MOVPE seems to be optimization of annealing conditions.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(96)00549-0