Luminescence characteristics of InAlPInGaP heterostructures having native-oxide windows

• Published in: Journal of crystal growth 1997-01, Vol.170 (1-4), p.413-417
• Main Authors: Islam, M.R., Dupuis, R.D., Holmes, A.L., Curtis, A.P., Gardner, N.F., Stillman, G.E., Baker, J.E., Hull, R.
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; Iii-v semiconductors; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Photoluminescence; Physics
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(96)00587-8

Data are presented on the luminescence characteristics of InGaPInAlP heterostructures with oxidized InAlP cladding layers grown by metalorganic chemical vapor deposition. The structures are grown on GaAs substrates and consist of either a 20 nm thick In0.5Ga0.5P quantum well or a 0.75 μm InGaP layer sandwiched between two InAlP bulk barriers or between two 10-period In0.5Al0.5PInxGa1−xP strain-modulated superlattice heterobarriers, where x varies from 0.5 to 0.45 and the period of the superlattice is ∼ 3 nm. The top InAlP cladding layer of the InAlPInGaP heterostructures is oxidized for 2–5.5 h at ∼ 500°C in an ambient of H2O vapor saturated in a N2 carrier gas. Photoluminescence and time-resolved photoluminescence studies at room temperature show that, as a result of the oxidation of a portion of the top InAlP cladding layer, the photoluminescence emission intensity and lifetime from the InGaP QWs increase significantly.