A highly luminescent crescent-shaped tensile-strained [formula omitted] quantum wire laser structure

We report a highly luminescent crescent-shaped tensile-strained GaAsPAlGaAs quantum wire (QWR) laser structure on 3 μm periodic V-grooves grown by low-pressure (100 Torr) metalorganic vapor phase epitaxy (MOVPE). Photoluminescence studies show that carriers are efficiently captured from neighboring...

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Bibliographic Details
Published in:Journal of crystal growth 1997-01, Vol.170 (1-4), p.585-589
Main Authors: Pan, Wugen, Yaguchi, Hiroyuki, Hanamaki, Yoshihiko, Ishikawa, Mitsuteru, Kaneko, Yasuhisa, Onabe, Kentaro, Ito, Ryoichi, Shiraki, Yasuhiro
Format: Article
Language:English
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Summary:We report a highly luminescent crescent-shaped tensile-strained GaAsPAlGaAs quantum wire (QWR) laser structure on 3 μm periodic V-grooves grown by low-pressure (100 Torr) metalorganic vapor phase epitaxy (MOVPE). Photoluminescence studies show that carriers are efficiently captured from neighboring quantum well layers (QWLs) into QWRs, which give efficient luminescence. The QWR light emitting diode (LED) shows polarization insensitivity resulting from the tensile strain properties of the QWR structure.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(96)00593-3