Design and operating considerations for a water-cooled close-spaced reactant injector in a production scale MOCVD reactor

• Published in: Journal of crystal growth 1997-01, Vol.170 (1-4), p.77-82
• Main Authors: Weyburne, David W., Ahern, Brian S.
• Format: Article
• Language: English
• Subjects: Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of crystal growth; physics of crystal growth; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(96)00617-3

In a previous paper, we described experimental results of the growth of a wide range of III–V materials using a water-cooled close-spaced injector that permits organometallic and hydride reactants to be injected ∼ 1 cm above the hot wafer. In this paper, we describe important design and operating considerations for this new metalorganic chemical vapor deposition (MOCVD) injector, including construction details, deposition efficiency and process window considerations. Our theoretical modeling indicates that the gas flow patterns are very different from those in a typical rotating disk reactor. By making analytical approximations for the velocity and temperature profiles, we have developed a flow stability parameter and find that the thermal stability depends on the square of the injector-to-substrate gap.