Molecular beam epitaxial growth of the [formula omitted] superlattices on (100) GaAs substrates

This paper deals with the molecular beam epitaxial growth of CdMnTeCdTe superlattices on (100)-oriented GaAs substrates, focusing on the initial growth of CdTe film on the lattice mismatched substrate and on the interface sharpness of the superlattice. The growth condition was optimized using the in...

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Bibliographic Details
Published in:Journal of crystal growth 1997-05, Vol.175-176, p.665-669
Main Authors: Yano, Mitsuaki, Koike, Kazuto, Furushou, Takeshi, Yodo, Tokuo
Format: Article
Language:English
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Summary:This paper deals with the molecular beam epitaxial growth of CdMnTeCdTe superlattices on (100)-oriented GaAs substrates, focusing on the initial growth of CdTe film on the lattice mismatched substrate and on the interface sharpness of the superlattice. The growth condition was optimized using the in situ observed signals of reflection high-energy electron diffraction (RHEED) from the surface. In addition to the RHEED analysis, the film quality was examined by using scanning electron microscope, photoluminescence, and X-ray diffraction. Use of a sulfur-treated GaAs surface and a growth interruption at each interface under an irradiation of Te beam are proposed to improve the superlattice quality on the lattice-mismatched substrate.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(96)00968-2