Growth and characterization of lattice-matched HgSe

• Published in: Journal of crystal growth 1997-05, Vol.175-176, p.642-646
• Main Authors: Parthier, L., Wißmann, H., Luther, S., Machel, G., Schmidbauer, M., Köhler, R., von Ortenberg, M.
• Format: Article
• Language: English
• Subjects: Mercury selenide; Molecular beam epitaxy
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(96)00993-1

HgSe layer on ZnTe and ZnTe1 − xSex layers were grown by molecular beam epitaxy. The introduction of a GaSb substrate reduces the lattice mismatch drastically (f = − 0.11%) compared to GaAs (f = − 7.4%). By spatial variation of the Se content from 0.016 ⩽ x ⩽ 0.041 the lattice constant of the buffer layer can be varied between that of the GaSb substrate and that of the HgSe layer. The different heterostructure systems were investigated by high-resolution X-ray diffraction to calculate the crystalline perfection and the strain behavior. A 150 nm HgSe layer pseudomorphically grown on a 145 nm ZnTe0.964Se0.036 buffer layer shows pendellösung thickness fringes indicating the high crystalline perfection of the structures, and has a FWHM of 84 arcsec. Only tensile strain is present in this structure. The carrier concentration and the mobility are calculated from Shubnikov-de-Haas oscillations in high magnetic fields up to 12 T. The best samples have a high mobility of up to 2.1 × 105cm2/V · s with a carrier concentration of 1.0 × 1017cm−3 at 4.2 K.