The growth and luminescence of SiGe dots

It is found that the SiGe alloy self-organizes into uniform quantum dots embedded in the Si layer during the growth of a strained SiGeSi superlattices on a Si(0 0 1) substrate by molecular beam epitaxy. The energy of photoluminescence from the quantum dots is higher than that of the indirect band ga...

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Bibliographic Details
Published in:Journal of crystal growth 1997-05, Vol.175-176, p.524-527
Main Authors: Chen, H., Xie, X.G., Cheng, W.Q., Huang, Q., Zhou, J.M.
Format: Article
Language:English
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Summary:It is found that the SiGe alloy self-organizes into uniform quantum dots embedded in the Si layer during the growth of a strained SiGeSi superlattices on a Si(0 0 1) substrate by molecular beam epitaxy. The energy of photoluminescence from the quantum dots is higher than that of the indirect band gap of Si, and the luminescence intensity of the quantum dots exceeds that of a quantum well by three orders of magnitude.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(96)01218-3