Metalorganic vapor-phase epitaxial regrowth of InP on reactive ion-etched mesa structures for p-substrate buried heterostructure laser application

• Published in: Journal of crystal growth 1997-09, Vol.180 (1), p.1-8
• Main Authors: Takemi, M., Kimura, T., Shiba, T., Shibata, K., Mihashi, Y., Takamiya, S., Aiga, M.
• Format: Article
• Language: English
• Subjects: Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; H 2S; InP; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; MOVPE; Physics; Regrowth; RIE; Vapor phase epitaxy; growth from vapor phase
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(97)00195-4

Growth behavior of sulfur-doped n-InP around reactive ion-etched (RIE) mesas has been investigated for realization of p-substrate buried heterostructure laser utilizing metalorganic vapor phase epitaxy. It is found that the growth of n-InP layer on the sidewall of the mesa ((1 1̄ 0) plane) is significantly suppressed, as the flow rate of hydrogen sulfide (H 2S) which is used for n-type doping, increased. This phenomenon of growth suppression was also observed for growth of highly S-doped n-InP on narrow (0 0 1) facets. Taking account of both, these phenomena can be explained by migration enhancement of indium atoms on sulfur-terminated surfaces caused by excess H 2S supply. Consequently, the shape of the regrown embedding layer was found to be exactly controlled by the H 2S flow rate. Using this technique, a p-substrate 1.3 μm buried heterostructure laser with pnp current-blocking structure has been successfully fabricated around the RIE mesa and excellent lasing characteristics with high reliability has been realized for the first time.