Enhancement of diamond film uniformity in a biased microwave-plasma-enhanced chemical vapor deposition system

• Published in: Journal of crystal growth 1997-09, Vol.180 (2), p.198-205
• Main Authors: Kim, S.H, Park, Y.S, Yun, W.S, Lee, J.-W
• Format: Article
• Language: English
• Subjects: Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Cyclic process; Diamond film; Exact sciences and technology; Film uniformity; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Nucleation; Physics; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(97)00209-1

Diamond films were deposited on (1 0 0) Si substrates (1 × 1 cm 2) using a microwave-plasma-enhanced chemical vapor deposition (MPECVD) system. The {1 0 0}-oriented texture growth of diamond film has been achieved by three-step procedure (carburization → nucleation → growth). We found that the morphology and the uniformity of the as-deposited film vary from position to position on the substrate. The application of a cyclic method in the nucleation step leads to an increase in the density of {1 0 0}-oriented grains as well as film uniformity. The surface morphologies, diamond qualities, and microstructures of the films have been investigated. Reason for the enhancement of the film uniformity and the increase in the density of the {1 0 0}-oriented grains are discussed.