GaAs epitaxy by chemical vapour transport under high, earth and low-gravity conditions

Homoepitaxy of GaAs on hemispherical substrates have been realised by chemical vapour transport in four different gravity levels. Experiments have been performed on earth, under 5 g and 10 g acceleration conditions using a centrifuge and under a microgravity environment (EURECA-I mission). The sourc...

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Bibliographic Details
Published in:Journal of crystal growth 1998, Vol.183 (1), p.1-9
Main Authors: Chevrier, Véronique, Launay, Jean-Claude, Laügt, Sophie, Viraphong, Oudomsack, Gibart, Pierre
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Growth in microgravity environments
Materials science
Methods of crystal growth
physics of crystal growth
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Vapor phase epitaxy
growth from vapor phase
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Summary:Homoepitaxy of GaAs on hemispherical substrates have been realised by chemical vapour transport in four different gravity levels. Experiments have been performed on earth, under 5 g and 10 g acceleration conditions using a centrifuge and under a microgravity environment (EURECA-I mission). The source was either undoped GaAs or tin-doped GaAs. Analysis and comparison of the grown layers show that, in the applied conditions, the gravity level is not a relevant parameter and that tin is an inhibitor for the GaAs epitaxy.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(97)00414-4