MOCVD growth of MgSe thin films on GaAs substrates

MgSe thin films have been grown by metal-organic chemical vapor deposition on GaAs substrates. Our experimental results show that the crystal structure of MgSe depends strongly on both the growth temperature and the substrate orientation. Using the X-ray diffraction technique, we observed the three...

Full description

Saved in:
Bibliographic Details
Published in:Journal of crystal growth 1998, Vol.183 (3), p.289-293
Main Authors: Jiang, Fengyi, Liao, Qinghua, Fan, Guanghan, Xiong, Chuanbing, Peng, Xuexin, Pan, Chuankang, Liu, Nianhua
Format: Article
Language:English
Subjects:
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
MgSe
MOCVD
Physics
Structure and morphology
thickness
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
Zincblende
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:MgSe thin films have been grown by metal-organic chemical vapor deposition on GaAs substrates. Our experimental results show that the crystal structure of MgSe depends strongly on both the growth temperature and the substrate orientation. Using the X-ray diffraction technique, we observed the three phases of MgSe; the rock salt, wurtzite and zincblende structures. The lattice constant of zincblende MgSe was determined to be 5.96 Å.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(97)00426-0