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Analysis of Si1-xGex on Si heterostructures grown by MBE as a function of substrate temperature

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Bibliographic Details
Published in:	Journal of crystal growth 1998-03, Vol.186 (3), p.375-381
Main Authors:	KIM, S.-G, KIM, J, BAE, I.-H, JIN GUN KOO, NAM, K.-S
Format:	Article
Language:	English
Subjects:	Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Materials science Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
Online Access:	Get full text
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