InAsP/InGaAsP periodic gain structure for 1.5 μm vertical cavity surface emitting laser applications

• Published in: Journal of crystal growth 1998-06, Vol.188 (1), p.295-299
• Main Authors: Behrend, J, Carlin, J.F, Sirbu, A.V, Berseth, C.A, Rudra, A, Kapon, E
• Format: Article
• Language: English
• Subjects: AFM; CBE; Exact sciences and technology; Fundamental areas of phenomenology (including applications); InAsP; Lasers; Optics; Periodic gain structure; Physics; Semiconductor lasers; laser diodes; TEM
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(98)00084-0

We have studied the capabilities of chemical beam epitaxy (CBE) to produce high-gain media for long-wavelength (1.5 μm) vertical cavity surface emitting lasers (VCSELs). Using a parameter pair of low growth temperature and small V/III ratio the integration of up to 15 highly strained (1.78%) InAsP quantum wells (QWs) into a periodic gain structure (PGS) is successfully demonstrated. In this work we present data of atomic force microscopy (AFM), X-ray diffraction, reflectivity and electro-luminescence measurements that prove the very good structural and optical quality of this CBE grown PGS. As an alternative to conventional multi quantum well (MQW) systems as active layers, a high-performance PGS may be used in a VCSEL structure to reduce the very strict requirements on the InP-based distributed Bragg reflectors (DBRs) or to increase the achievable output power. Due to the use of thickness-reduced InP-based DBRs in conjunction with a PGS as the active region the fabrication of fully epitaxial grown long-wavelength VCSELs might also be possible with CBE.