Strain investigations of wurtzite GaN by Raman phonon diagnostics with photoluminescence supplement

Compressional and tensile biaxially strained GaN epilayers have been investigated by micro-Raman scattering and X-ray diffraction. Strain dependences have been observed also by photoluminescence measurements at higher temperatures. Additionally performed calculation of the strain dependence of the f...

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Bibliographic Details
Published in:Journal of crystal growth 1998-06, Vol.189-190, p.634-638
Main Authors: Klose, Manfred, Wieser, Nikolai, Rohr, Gernot C, Dassow, Ralf, Scholz, Ferdinand, Off, Jürgen
Format: Article
Language:English
Subjects:
Doping
Photoluminescence
Raman scattering
Strain
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Summary:Compressional and tensile biaxially strained GaN epilayers have been investigated by micro-Raman scattering and X-ray diffraction. Strain dependences have been observed also by photoluminescence measurements at higher temperatures. Additionally performed calculation of the strain dependence of the fundamental band gap supplements the investigations.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(98)00226-7