Metalorganic chemical vapor deposition growth of high-quality AlGaAs using dimethylethylamine alane and triethylgallium–dimethylethylamine adduct

• Published in: Journal of crystal growth 1998-08, Vol.192 (1), p.79-83
• Main Authors: Miyashita, M., Kizuki, H., Tsugami, M., Fujii, N., Mihashi, Y., Takamiya, S.
• Format: Article
• Language: English
• Subjects: AlGaAs; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; DMEAA; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; MOCVD; Photoluminescence; Physics; TEG-DMEA
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(98)00351-0

High-purity Al 0.25Ga 0.75As layer has been successfully obtained by metalorganic chemical vapor deposition (MOCVD) using new precursors of dimethylethylamine alane (DMEAA) and triethylgallium–dimethylethylamine adduct (TEG–DMEA). It is shown that the concentrations of residual carbon and oxygen in the AlGaAs layer grown at a relatively low V/III ratio were under detection limits of secondary-ion mass spectrometry (3.0×10 15 and 5.0×10 15 cm −3, respectively). In the photoluminescence spectra at 4.2 K, the peak intensity of carbon-related emission was much weaker than that of bound-exciton (BE) emission. The full-width at half-maximum for the BE peak was as narrow as 5.6 meV. Any predeposition between these precursors due to a gas-phase prereaction was not observed. These results indicate that the combination of DMEAA and TEG–DMEA are promising precursors for MOCVD growth of AlGaAs with low residual impurity concentration.