Lattice parameter of ZnSe crystals grown from melt under Zn partial pressure

Dependence of the lattice parameter of melt-grown ZnSe on Zn partial pressure have been measured by the Bond method. The lattice parameters changed between 0.566902 and 0.566908 nm depending on the partial pressure of Zn during growth. The minimum lattice parameter was observed at the Zn reservoir t...

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Bibliographic Details
Published in:Journal of crystal growth 1998-09, Vol.193 (1), p.39-42
Main Authors: Udono, Haruhiko, Kikuma, Isao, Okada, Yasumasa
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Growth from melts
zone melting and refining
Halides, chalcogenides and analogous compounds of group vb
Inorganic compounds
Lattice parameter
Materials science
Melt growth
Methods of crystal growth
physics of crystal growth
Physics
Pressure control
Stoichiometry
Structure of solids and liquids
crystallography
Structure of specific crystalline solids
The Bond method
ZnSe
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Summary:Dependence of the lattice parameter of melt-grown ZnSe on Zn partial pressure have been measured by the Bond method. The lattice parameters changed between 0.566902 and 0.566908 nm depending on the partial pressure of Zn during growth. The minimum lattice parameter was observed at the Zn reservoir temperature of 1000°C, where the melt composition was near stoichiometry.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(98)00475-8