Highly uniform AlAs/GaAs, InGa(Al)P/GaAs and InGaAs(P)/InP structures grown in a three 2″ wafer close-spaced vertical rotating disk reactor

• Published in: Journal of crystal growth 1998-12, Vol.195 (1), p.644-647
• Main Authors: Vanhollebeke, K., Considine, L., Moerman, I., Demeester, P., Thrush, E.J., Crawley, J.A.
• Format: Article
• Language: English
• Subjects: Close-spaced vertical reactor; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Iii-v semiconductors; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; MOVPE; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Photoluminescence; Physics; Uniformity; Vapor phase epitaxy; growth from vapor phase
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(98)00566-1

Previously we have reported the MOVPE growth of uniform AlGaAs/GaAs and InGaAs(P)/InP structures grown in a three 2″ wafer close-spaced vertical disk reactor at reduced pressure (76 Torr) [X. Zhang, I. Moerman, C. Sys, P. Demeester, J.A. Crawley, E.J. Thrush, J. Crystal Growth 170 (1997) 83–87]. Extending this work we now report photoluminescence (PL) and X-ray (DXRD) results for growth at 700 Torr including the In(Al)GaP materials system. For AlAs/GaAs layers we have achieved a total thickness variation within ±2% for the three wafers over a radial distance of 48 mm in both the x and y directions and a standard deviation ( σ n ) of 0.69% measured by DXRD. In the InGaAs system we have achieved a standard deviation of 0.869 nm in the PL wavelength over all three wafers excluding the outer 2 mm. The best composition uniformity we have obtained in the InGaAsP system yields a standard deviation of 1.8 nm in PL wavelength over a 48 mm radial distance. For InGaP we have obtained an indium composition variation within the wafer of 0.203%.