Phase separation in InGaN/GaN multiple quantum wells and its relation to brightness of blue and green LEDs

InGaN/GaN multiple quantum wells (MQW) and high-brightness MQW light-emitting diodes were grown by production scale metal-organic chemical vapor deposition (MOCVD). We have found that the extent of InGaN phase separation in InGaN MQWs depends strongly on growth conditions. Multiple peaks in photolum...

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Bibliographic Details
Published in:Journal of crystal growth 1998-12, Vol.195 (1), p.397-400
Main Authors: Tran, C.A, Karlicek, R.F, Schurman, M, Osinsky, A, Merai, V, Li, Y, Eliashevich, I, Brown, M.G, Nering, J, Ferguson, I, Stall, R
Format: Article
Language:English
Subjects:
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Electrical properties of specific thin films
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
High-brightness blue LED
Iii-v semiconductors
InGaN multiple quantum wells
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Phase separation
Physics
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Summary:InGaN/GaN multiple quantum wells (MQW) and high-brightness MQW light-emitting diodes were grown by production scale metal-organic chemical vapor deposition (MOCVD). We have found that the extent of InGaN phase separation in InGaN MQWs depends strongly on growth conditions. Multiple peaks in photoluminescence (PL) of InGaN/GaN MQWs and electroluminescence (EL) of MQW LEDs can be observed at room temperature. In the presence of InGaN phase separation, photoluminescence of MQW is red-shifted with respect to the expected wavelength calculated for the apparent indium composition determined by X-ray diffraction (XRD). We have determined that InGaN phase separation is necessary for high brightness electroluminescence in LEDs. Under optimal growth conditions, MQWs with very well-defined XRD satellite peaks and PL in the wavelength range of (450–520 nm) can be achieved. High-brightness LEDs emitting at 480 nm have been successfully fabricated with an output power well better than 2 mW at 20 mA and with a forward voltage less than 4 V.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(98)00572-7