Growth of Ru doped semi-insulating InP by low pressure metalorganic chemical vapor deposition

• Published in: Journal of crystal growth 1998-12, Vol.195 (1), p.69-73
• Main Authors: Dadgar, A., Stenzel, O., Köhne, L., Näser, A., Straßburg, M., Stolz, W., Bimberg, D., Schumann, H.
• Format: Article
• Language: English
• Subjects: Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Defects and impurities: doping, implantation, distribution, concentration, etc; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; MOCVD; Physics; Semi-insulating InP; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Transition metal doping
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(98)00678-2

Ruthenium doping has been successfully applied for the growth of semi-insulating (s.i.) InP. In contrast to the 3d-transition metal (TM) Fe, the isovalent 4d-TM Ru exhibits a four orders of magnitude lower diffusion coefficient and shows no interdiffusion with p-type dopants. Most important, Ru compensates electrons as well as holes, a prerequisite for complete compensation under double injection conditions. The growth of Ru doped InP layers has been investigated using bis( η 5-2,4-dimethylpentadienyl)ruthenium(II) for Ru doping, different P-precursors (PH 3, TBP, DTBP) and H 2 or N 2 carrier gas.