Dependence of lattice parameter of melt-grown ZnSe on Zn partial pressure during in situ annealing

Lattice parameters of annealed ZnSe crystals have been measured by the Bond method. The annealing was carried out at 1000°C under a definite Zn partial pressure maintained by heating a Zn reservoir after growth from the melt under Zn partial pressure. The lattice parameter, a, depends on the Zn rese...

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Bibliographic Details
Published in:Journal of crystal growth 1999-02, Vol.197 (3), p.466-470
Main Authors: Udono, Haruhiko, Kikuma, Isao, Okada, Yasumasa
Format: Article
Language:English
Subjects:
Anneal
Bond method
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Halides, chalcogenides and analogous compounds of group vb
Inorganic compounds
Lattice parameter
Melt growth
Physics
Structure of solids and liquids
crystallography
Structure of specific crystalline solids
ZnSe
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Summary:Lattice parameters of annealed ZnSe crystals have been measured by the Bond method. The annealing was carried out at 1000°C under a definite Zn partial pressure maintained by heating a Zn reservoir after growth from the melt under Zn partial pressure. The lattice parameter, a, depends on the Zn reservoir temperature during annealing, T Zn(A); a=0.566898±0.000005 nm at T Zn(A) of 450–600°C, a=0.566910±0.000005 nm at T Zn(A) of 750°C and a=0.566913±0.000003 nm at T Zn(A) of 900°C. The dependence of lattice parameter on Zn partial pressure is discussed.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(98)00745-3