The surface modification of Si(111) substrates with SiNx for the growth of high quality β-SiC epilayers

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Bibliographic Details
Published in:Journal of crystal growth 1999-03, Vol.197 (4), p.841-848, Article 841
Main Authors: KWANG CHUL KIM, KEE SUK NAHM, SUH, E.-K, YONG GYOO HWANG
Format: Article
Language:English
Subjects:
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
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ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(98)00942-7