Vapour growth of bulk ZnSe single crystals

Large, partly faceted ZnSe single crystals have been grown in the closed tube system by the unseeded sublimation travelling heater method (STHM) at 1100°C and undercooling Δ T less than 10°C. As-grown crystals are highly transparent and have very good optical homogeneity by sight. High quality of th...

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Bibliographic Details
Published in:Journal of crystal growth 1999-03, Vol.198, p.975-979
Main Authors: Yakimovich, V.N., Levchenko, V.I., Yablonski, G.P., Konstantinov, V.I., Postnova, L.I., Kutas, A.A.
Format: Article
Language:English
Subjects:
Crystal growth
Dislocation density
Photoluminescence
Single crystals
ZnSe
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Summary:Large, partly faceted ZnSe single crystals have been grown in the closed tube system by the unseeded sublimation travelling heater method (STHM) at 1100°C and undercooling Δ T less than 10°C. As-grown crystals are highly transparent and have very good optical homogeneity by sight. High quality of the crystals was confirmed by double crystal X-ray diffraction which showed the full-width at half-maximum (FWHM) of the rocking curves to be less than 20 arcsec on the (2 2 0) ZnSe diffraction planes of the crystals. Selective chemical etching showed a dislocation density of these faces to be less than 5×10 4 cm −2. The room-temperature photoluminescence (PL) spectrum under pulse excitation consists of only one near-band-edge line. Free and bound exciton as well as donor–acceptor pair recombination are observable at 13 K.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(98)01060-4