Activation energy for Ga diffusion on the GaAs(0 0 1)-(2×4) surface: an MBE-STM study

The pure migration of individual Ga atoms on the technologically important GaAs(0 0 1)-(2×4) reconstructed surface has been studied as a function of substrate temperature using a combined molecular beam epitaxy and scanning tunneling microscopy (STM) ultra-high vacuum, multi-chamber facility. We hav...

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Bibliographic Details
Published in:Journal of crystal growth 1999-05, Vol.201, p.88-92
Main Authors: Yang, H, LaBella, V.P, Bullock, D.W, Ding, Z, Smathers, J.B, Thibado, P.M
Format: Article
Language:English
Subjects:
Activation energy
Ga diffusion
GaAs -(2×4) surface
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Summary:The pure migration of individual Ga atoms on the technologically important GaAs(0 0 1)-(2×4) reconstructed surface has been studied as a function of substrate temperature using a combined molecular beam epitaxy and scanning tunneling microscopy (STM) ultra-high vacuum, multi-chamber facility. We have successfully deposited 1 10 of a plane of Ga atoms onto a pristine GaAs surface under a constant As 4 beam equivalent pressure of 10 −6 Torr, at various substrate temperatures. After deposition the substrate was quenched to room temperature and transferred to the surface analysis chamber for STM imaging. A plot of the number density of islands formed as a function of deposition temperature follows an Arrhenius relationship. Assuming either a pure one-dimensional diffusion model or a pure isotropic two-dimensional diffusion model, the activation energy for diffusion is 2.3 or 1.7 eV, respectively.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(98)01296-2