Molecular beam epitaxy (MBE) in situ high-temperature annealing of HgCdTe

A novel approach of MBE in situ annealing of HgCdTe for the purposes of dislocation reduction and obtaining the required p-type electrical properties is described in the paper. To prevent surface re-evaporation during annealing in vacuum, double cap layers of CdTe and wide band gap material of ZnTe...

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Bibliographic Details
Published in:Journal of crystal growth 1999-05, Vol.201, p.524-529
Main Authors: He, L, Wang, S.L, Yang, J.R, Yu, M.F, Wu, Y, Chen, X.Q, Fang, W.Z, Qiao, Y.M, Gui, Yongsheng, Chu, Junhao
Format: Article
Language:English
Subjects:
Annealing
Dislocations
HgCdTe
MBE
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Summary:A novel approach of MBE in situ annealing of HgCdTe for the purposes of dislocation reduction and obtaining the required p-type electrical properties is described in the paper. To prevent surface re-evaporation during annealing in vacuum, double cap layers of CdTe and wide band gap material of ZnTe or ZnSe were grown on top of the HgCdTe, and their effects were studied. The surface EPD of HgCdTe grown on GaAs substrates was reduced to 2–4×10 6 cm −2 by vacuum annealing at 390–450°C. The relation between the hole concentration and annealing temperature was obtained.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(98)01395-5