Self-organized MBE growth of II–VI epilayers on patterned GaSb substrates

We report on the self-organized MBE growth of II–VI epilayers on patterned and unpatterned GaSb substrates resulting in quantum wires and quantum wells, respectively. The HgSe : Fe quantum wires were grown on (0 0 1)GaSb substrates with a buffer of lattice-matched ZnTe 1− x Se x . Due to the anisotr...

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Bibliographic Details
Published in:Journal of crystal growth 1999-05, Vol.201, p.619-622
Main Authors: Wissmann, H, Tran Anh, T, Rogaschewski, S, von Ortenberg, M
Format: Article
Language:English
Subjects:
Gallium antimonide
Mercury selenide
Molecular beam epitaxy
Quantum wire
Selective growth
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Summary:We report on the self-organized MBE growth of II–VI epilayers on patterned and unpatterned GaSb substrates resulting in quantum wires and quantum wells, respectively. The HgSe : Fe quantum wires were grown on (0 0 1)GaSb substrates with a buffer of lattice-matched ZnTe 1− x Se x . Due to the anisotropic growth of HgSe on the A-oriented stripes roof-like overgrowth with a definite ridge was obtained. Additional Fe doping in the direct vicinity of the ridge results in a highly conductive quantum wire.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(98)01423-7