Optimization of MBE p-PbSe/Si (1 1 1) growth

The adherence and properties of p-type PbSe layer grown on CaF 2//Si(1 1 1) by molecular beam epitaxy (MBE) can be improved using an additional stage, corresponding to a CaF 2 layer annealing under selenium flux. Reflective high-energy electron diffraction (RHEED) and Auger electron spectroscopy (AE...

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Bibliographic Details
Published in:Journal of crystal growth 1999-05, Vol.201, p.1049-1052
Main Authors: Gautier, C, Cambon, M, Breton, G, Nouaoura, M, Averous, M
Format: Article
Language:English
Subjects:
AES
Molecular beam epitaxy
PbSe layer
RHEED
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Summary:The adherence and properties of p-type PbSe layer grown on CaF 2//Si(1 1 1) by molecular beam epitaxy (MBE) can be improved using an additional stage, corresponding to a CaF 2 layer annealing under selenium flux. Reflective high-energy electron diffraction (RHEED) and Auger electron spectroscopy (AES) measurements demonstrate that this step leads to the formation of CaSe nuclei. The best crystalline quality of PbSe layers is reached with high PbSe growth rates corresponding to a thick PbSe coalescence layer. In contrast, electrical properties are not easily controllable by the Se/PbSe flux ratio adjustment.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(98)01522-X