Time-resolved photoluminescence of heavily nitrogen-doped ZnSe: role of fluctuations

Results of time-resolved photoluminescence of several heavily nitrogen-doped ZnSe samples ([N] > 10 18 cm −3 are presented, with emphasis on the decay at relatively long times and at a particular wavelength of decay. Both these aspects are well explained by the presence of potential fluctuations...

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Bibliographic Details
Published in:Journal of crystal growth 1998, Vol.184, p.525-530
Main Authors: Kuskovsky, I., Li, D., Neumark, G.F., Moldovan, M., Giles, N.C., Bondarev, V.N., Pikhitsa, P.V.
Format: Article
Language:English
Subjects:
Compensation
Compound semiconductors
Doping
Fluctuations
Photoluminescence
Time decay
ZnSe: N
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Summary:Results of time-resolved photoluminescence of several heavily nitrogen-doped ZnSe samples ([N] > 10 18 cm −3 are presented, with emphasis on the decay at relatively long times and at a particular wavelength of decay. Both these aspects are well explained by the presence of potential fluctuations in such materials, but not by earlier theories which neglected fluctuations. The observed decay as a function of N concentration is also well explained by our model. We obtain quantitative agreement, and obtain good values for the decay constant W 0 and for the net acceptor concentrations.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(98)80109-7