Optical properties and defect characterization of ZnSe laser diodes grown on tellurium-terminated GaAs

We present studies of electrical properties, electroluminescence (EL) and degradation behaviour of laser diodes grown on GaAs, terminated with Te (Te: GaAs). Compared to conventional lasers (grown on Zn-treated GaAs), the lasers grown on Te : GaAs show a comparable stacking fault density, but higher...

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Bibliographic Details
Published in:Journal of crystal growth 1998-02, Vol.184, p.571-574
Main Authors: Albert, D., Olszowi, B., Spahn, W., Nürnberger, J., Schüll, K., Korn, M., Hock, V., Ehinger, M., Faschinger, W., Landwehr, G.
Format: Article
Language:English
Subjects:
Degradation
II–VI laser diodes
Semiconductors
Te terminated GaAs
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Summary:We present studies of electrical properties, electroluminescence (EL) and degradation behaviour of laser diodes grown on GaAs, terminated with Te (Te: GaAs). Compared to conventional lasers (grown on Zn-treated GaAs), the lasers grown on Te : GaAs show a comparable stacking fault density, but higher spontaneous emission and very low threshold current densities. The degradation of such a laser structure has been observed through a transparent contact using electroluminescence imaging. As with conventional laser diodes, dark spots are observed and the dimming and growth of these dark spots has been monitored during the lifetime of the device. In addition, a continuous darkening of the background between the spots has been also observed.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(98)80119-X