Molecular beam epitaxy of ZnCdSe/ZnSe strained quantum-well structures on GaAs(1 1 1)A substrates and piezoelectric properties

• Published in: Journal of crystal growth 1998, Vol.184, p.723-727
• Main Authors: Matsumura, N., Shimakawa, H., Gotou, M., Saraie, J.
• Format: Article
• Language: English
• Subjects: GaAs substrate; Molecular beam epitaxy; Piezoelectric property; Strained quantum well; ZnCdSe/ZnSe
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(98)80151-6

We grew Zn 0.8Cd 0.2Se/ZnSe strained quantum-well structures on GaAs(1 1 1)A substrates 10°-misoriented toward [1 0 0] direction by molecular beam epitaxy. The growth rates and the Cd composition in the ZnCdSe epilayers on (1 1 1)A substrates were small compared to those on (1 0 0) substrates at the same growth conditions. Therefore, in order to compare (1 1 1) and (1 0 0) samples with the same structures, these were grown separately. The piezoelectric properties were characterized by photoluminescence measurements at 11 K. The emission energies of the (1 1 1) quantum wells shifted toward lower energy compared to those of the (1 0 0) quantum wells with the same well width, owing to the piezoelectric effect. We calculated the internal electric field of these samples to be 0.9 × 10 7 V/m. The difference from the theoretical value (1.9 × 10 7 V/m) was discussed. The emission intensities decreased with increasing well width. We observed the screening of the piezoelectric field by the photogenerated carriers.