Schottky barrier tunability in Al/ZnSe interfaces

The Schottky barrier for Al/ZnSe (0 0 1) junctions was determined in situ by X-ray photoemission spectroscopy following Al deposition on ZnSe (0 0 1) c(2 × 2), ZnSe (0 0 1) 2 × 1, or ZnSe (0 0 1) 1 × 1 surfaces fabricated by molecular beam epitaxy. While similar values of the barrier were found on t...

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Bibliographic Details
Published in:Journal of crystal growth 1998-02, Vol.184, p.193-198
Main Authors: Lazzarino, M., Scarel, G., Rubini, S., Bratina, G., Bonanni, A., Sorba, L., Franciosi, A.
Format: Article
Language:English
Subjects:
Photoemission
Schottky barrier
Tunability
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Summary:The Schottky barrier for Al/ZnSe (0 0 1) junctions was determined in situ by X-ray photoemission spectroscopy following Al deposition on ZnSe (0 0 1) c(2 × 2), ZnSe (0 0 1) 2 × 1, or ZnSe (0 0 1) 1 × 1 surfaces fabricated by molecular beam epitaxy. While similar values of the barrier were found on the first two types of interfaces, the p-type Schottky barrier was 0.24 eV lower for the third type of interface.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(98)80320-5