Characteristics of the InAs quantum dots MBE grown on the vicinal GaAs(0 0 1) surfaces misoriented to the [0 1 0] direction

Atomic-force microscopy is used to study InAs quantum dot arrays grown by molecular beam epitaxy on vicinal GaAs(0 0 1) surfaces misoriented to the [0 1 0] direction by 1°, 2°, 4°, and 6°. For a chosen misorientatoin direction, it is shown that the vicinal GaAs(0 0 1) surface is covered with a net o...

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Bibliographic Details
Published in:Journal of crystal growth 1999-05, Vol.201, p.1154-1157
Main Authors: Evtikhiev, V.P., Tokranov, V.E., Kryganovskii, A.K., Boiko, A.M., Suris, R.A., Titkov, A.N.
Format: Article
Language:English
Subjects:
AFM method
MBE growth
Quantum dots
Vicinal surfaces
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Summary:Atomic-force microscopy is used to study InAs quantum dot arrays grown by molecular beam epitaxy on vicinal GaAs(0 0 1) surfaces misoriented to the [0 1 0] direction by 1°, 2°, 4°, and 6°. For a chosen misorientatoin direction, it is shown that the vicinal GaAs(0 0 1) surface is covered with a net of stepped terraces. The condensation of the network of terraces upon increasing of the misorientation angle leads to the suppression of adatom surface diffusion and makes it possible to achieve higher densities and better uniformity of quantum dots arrays.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(99)00008-1