Self-assembled InAs dots and quantum wires fabricated on patterned (3 1 1)A GaAs substrates by molecular beam epitaxy

We have investigated one-dimensionally arranged self-assembled growth of InAs quantum dots and the formation of lateral n–i–p–i heterojunction quantum wire structures based on the facet-selective doping mechanism of an amphoteric silicon dopant. Both structures were successfully formed on the same f...

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Bibliographic Details
Published in:Journal of crystal growth 1999-05, Vol.201, p.1164-1167
Main Authors: Yoh, Kanji, Nakasaki, Ryusuke, Takabayashi, Shingo
Format: Article
Language:English
Subjects:
Amphoteric dopant
Lateral n–i–p–i structure
Quantum wire
Self-assembled InAs dot
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Summary:We have investigated one-dimensionally arranged self-assembled growth of InAs quantum dots and the formation of lateral n–i–p–i heterojunction quantum wire structures based on the facet-selective doping mechanism of an amphoteric silicon dopant. Both structures were successfully formed on the same facet stripes on patterned (3 1 1)A GaAs substrates by molecular beam epitaxy in a self-organized way, thus enabling quantum dots to be selectively formed along the quantum wires in a single growth sequence.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(99)00011-1