Effects of atomic hydrogen in molecular beam epitaxy of Al(Ga)As

The effects of atomic hydrogen on the growth of Al(Ga)As by molecular beam epitaxy (MBE) have been investigated. A decrease in Al content was observed for AlGaAs films grown by atomic hydrogen-assisted MBE (H-MBE) compared to conventional MBE-grown films. This tendency was consistent with the result...

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Bibliographic Details
Published in:Journal of crystal growth 1999-11, Vol.206 (4), p.267-270
Main Authors: Jang, Kee-Youn, Okada, Yoshitaka, Kawabe, Mitsuo
Format: Article
Language:English
Subjects:
Al hydrides
Al(Ga)As
Atomic hydrogen
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Molecular beam epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Physics
Reflection high-energy electron diffraction
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Summary:The effects of atomic hydrogen on the growth of Al(Ga)As by molecular beam epitaxy (MBE) have been investigated. A decrease in Al content was observed for AlGaAs films grown by atomic hydrogen-assisted MBE (H-MBE) compared to conventional MBE-grown films. This tendency was consistent with the results of decreased AlAs growth rates as determined by in situ reflection high-energy electron diffraction (RHEED). Further, the increase in the mass signal of AlH 2 + by quadruple mass spectrometer was observed during H-MBE growth. In H-MBE, it is thought that enhanced Al re-evaporation from the growth surface arises via formation of Al hydrides during growth. The observed difference of Al re-evaporation between vicinal A-surface and B-surface has been discussed, which is ascribed to the decreased growth rate and Al content.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(99)00269-9