Heteroepitaxial growth of AlN at the resonance point of nitrogen-ECR plasma

We present a novel technique to grow AlN on sapphire heteroepitaxially by the use of high-density active nitrogen species, which are generated at the resonance point of nitrogen-ECR plasma, where metal Al is evaporated. The AlN film having the c-axis perpendicular to the c-plane of sapphire was obta...

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Bibliographic Details
Published in:Journal of crystal growth 2000-02, Vol.209 (2), p.406-409
Main Authors: Inushima, T, Ashino, T, Murano, K, Shiraishi, T, Davydov, V.Yu, Ohoya, S
Format: Article
Language:English
Subjects:
AlN
Crystal growth
ECR plasma
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Summary:We present a novel technique to grow AlN on sapphire heteroepitaxially by the use of high-density active nitrogen species, which are generated at the resonance point of nitrogen-ECR plasma, where metal Al is evaporated. The AlN film having the c-axis perpendicular to the c-plane of sapphire was obtained at the growth rate of 0.5 μm/h with the substrate temperature lower than 600°C. The film had the band gap energy of 6.0 eV and good Raman selection rules.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(99)00580-1