Accuracy of differential method to distinguish crystal originated particles from light point defects in Czochralski-grown silicon wafers

To distinguish crystal-originated particles (COPs) from light point defects (LPDs) in Czochralski-grown silicon (Si) wafers, we developed a differential method and studied its performance. To distinguish COPs from LPDs, we compared the difference in LPD properties before and after SC-1 cleaning. COP...

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Bibliographic Details
Published in:Journal of crystal growth 2000-03, Vol.210 (1), p.31-35
Main Authors: Shimoi, N., Kurokawa, M., Tanabe, A., Koizumi, N., Matsushita, Y.
Format: Article
Language:English
Subjects:
AFM
Condensed matter: structure, mechanical and thermal properties
Crystal-originated particle, SC-1
Defects and impurities in crystals
microstructure
Exact sciences and technology
Experimental determination of defects by diffraction and scattering
Grown-in defect
Light point defect
Physics
Structure of solids and liquids
crystallography
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Summary:To distinguish crystal-originated particles (COPs) from light point defects (LPDs) in Czochralski-grown silicon (Si) wafers, we developed a differential method and studied its performance. To distinguish COPs from LPDs, we compared the difference in LPD properties before and after SC-1 cleaning. COP is defined as an LPD whose location does not change and becomes large in size after SC-1 cleaning. COPs obtained by the differential method were directly observed by atomic force microscopy (AFM) and the accuracy of counting COPs was estimated. Under optimum conditions, COP detection exceeded 75%, making the differential method useful for the estimation of COPs in CZ-Si wafers.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(99)00641-7