Characterization and growth of ZnSTe epilayers by hot-wall epitaxy

• Published in: Journal of crystal growth 2000-03, Vol.210 (4), p.521-526
• Main Authors: Yu, Y.-M, Nam, S, Rhee, J.-K, O, Byungsung, Lee, K.-S, Choi, Y.D
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Energy gap; Exact sciences and technology; Hot-wall epitaxy; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity); Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of bulk materials and thin films; Physics; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Vacuum deposition; ZnSTe
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(99)00738-1

ZnS 1− x Te x epilayers were grown on GaAs(1 0 0) substrates by hot-wall epitaxy in a wide range of Te composition. The Te composition was determined by Rutherford backscattering spectrometry and the lattice constant was measured by double-crystal rocking curve. It was found that the lattice of the epilayer matches well with that of the substrate at x=0.37 as expected by Vegard's rule, and the energy gap was also determined as a function of Te composition by spectrophotometer. It showed that a quadratic relation with the composition: E g( x)=3.71−5.27 x+3.83 x 2. Photoluminescence characteristics were also studied.